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PRELIMINARY
16Mbit CMOS SRAM ELECTRONICS 512K x 32 Bit High-Speed CMOS Static RAM-5.0V Operating
FEATURES Fast Access Time : 15 or 20ns Single 5.0 0.5V Power Supply Power Dissipation - Standby 80mA - Operating 540mA (Max.) TTL Compatible Inputs and Outputs Fully Static Operation - No clock or Refresh required Three State Outputs Center Power/Ground Pin Configuration Die Control : CS0#, CS1 #, CS2 # and CS3 # chip select DESCRIPTION The 3DS16-325 is a 16,777,216 - bit high-speed Static Random Access Memory organized as 4 banks of 262,144 words of 16 bits. Two banks can operate silmultaneously, giving 32 bit processing. The 3DS16-325 uses 32 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. Also it allows lower and upper byte access by data control (UB#, LB#). The device is manufactured using 3D PLUS well known MCM-V patended technology designed for high-speed circuit applications. It is particularly well suited for use in high-density high-speed system applications. The 3DS16-325 is packaged in a 64-pin PQFP .
3DS16-325
PIN CONFIGURATION
PIN DESCRIPTION
3DS16-325S ( TOP VIEW )
A0-A17 WE#
Address Inputs Write Enable Chip Selects Output Enable Lower - Byte Control Upper - Byte Control Data Inputs / Outputs 5.0 V Power Ground No Connection
CS2# CS1# CS3# I/O17 I/O18 I/O19 I/O29 I/O30 I/O31 I/O32
CS0#, CS1# CS2#, CS3# OE#
64
55 54
Ao A1 A2 A3 A4 CSO# I/O1 I/O2 I/O3 I/O4 Vcc Vss I/O5 I/O6 I/O7 I/O8 WE# A5 A6 A7 A8 A9
1
PQFP64
22 23
33 32
A17 A16 A15 OE# UB# LB# I/O16 I/O15 I/O14 I/O13 Vss Vcc I/O12 I/O11 I/O10 I/O9 NC A14 A13 A12 A11 A10
AO-17 WE# OE# UB# LB# CSO# I/O1-16
LB# UB# I/O1 - I/O32 Vcc Vss NC
BLOCK DIAGRAM
AO-17 WE# OE# UB# LB# CS# I/O AO-17 WE# OE# UB# LB# CS# I/O AO-17 WE# OE# UB# LB# CS# I/O AO-17 WE# OE# UB# LB# CS# I/O
256k x 16 BIts
I/O24 I/O23 I/O22 I/O21 I/O20 I/O28 I/O27 I/O26 I/O25 NC
256k x 16 BIts
CS2#
256k x 16 BIts
CS1# I/O17-32
256k x 16 BIts
CS3#
3D PLUS, 641 rue Helene Boucher - ZI F-78532 BUC Cedex FRANCE Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89 Web : http://www. 3d-plus.com
3DFP-0012 Rev : 2 January 2000 Page 1/3
PRELIMINARY
16Mbit CMOS SRAM ELECTRONICS
ABSOLUTE MAXIMUM RATINGS Parameter Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature Commercial Operating Temperature Industrial TA -40 to 85 C H = HIGH Symbol VIN. VOUT Vcc PD TSTG TA Rating -0.5 to +7.0 -0.5 to +7.0 2.0 -65 to 150 0 to 70 Unit V V W C C TRUTH TABLE MODE Not Selected Not Selected DOUT Disable Read Write CS# X H L L L L = LOW WE# X X H H L X = Don't Care OE# X X H L X I/O Pin High-Z High-Z High-Z DOUT DIN Supply Current Standby Standby Active Active Active
3SD16-325
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
If OE is LOW during Write, tWHZ must be observed before data is presented to the device.
DC OUTPUT CHARACTERISTICS Symbol VOH VOL Parameter HIGH Voltage LOW Voltage Conditions IOH = -4.0mA IOL = 8.0mA Min. 2.4 0.4 Max. Unit V V
RECOMMENDED DC OPERATING CONDITIONS (TA=0 to 70C) Parameter Supply Voltage Ground Input High Voltage Input Low Voltage Symbol VCC VSS VIH VCC Min 4.5 0 2.2 -0.5 Typ 5.0 0 Max 5.5 0 VCC+0.5 0.8 Unit V V V V
NOTE: The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*(TA = 25C, f = 1.0MHZ) Item Input / Output Capacitance Input / Capacitance Symbol CI/O CIN Test Conditions VI/O = 0V VIN = 0V Min Max 16 28 Unit pF pF Symbol TRAC TWC Parameter Read Cycle Time Write Cycle Time Val. 15/20ns 15/20ns
*NOTE : Capacitance is sampled and not 100% tested.
DC AND OPERATING CHARACTERISTICS (TA=0 to 70C, VCC=5.0 0.5V, unless otherwise specified) Parameter Input Leakage Current Output Leakage Current Symbol ILI ILO VIN = VSS to VCC CS# = VIH or OE# = VIH or WE# = VIL VOUT = VSS to VCC Operating Current ICC Min. Cycle, 100% Duty CS = VIL, VIN = VIH or VIL, IOUT = 0mA 15ns 20ns Standby Current ISB ISB1 Min. Cycle, CS# = VIH f = 0MHZ, CS# = VCC-0.2V, VINVCC-0.2V or VIN 0.2V Output Low Voltage Level Output High Voltage Level VOL VOH IOL = 8mA IOH = -4mA 2.4 80 0.4 mA V V 540 mA 530 280 mA Test Conditions Min -8 -8 Max 8 8 Unit A A
Note: The above parameters are also guaranteed at industrial temperature range.
3D PLUS, 641 rue Helene Boucher - ZI F-78532 BUC Cedex FRANCE Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89 Web : http://www. 3d-plus.com
3DFP-0012 Rev : 2 January 2000 Page 2/3
PRELIMINARY
16Mbit CMOS SRAM ELECTRONICS
MECHANICAL DRAWING D Dimensions (mm) D1 A D D1 E E1 e Typ. E E1 PQFP e e1
Min Max
3DS16-325
7.15 15.80 10.80 27.80 22.80 0.80 0.30
7.75 16.20 11.20 28.20 23.20
e1 64 Places
A
ORDERING INFORMATION Please contact 3D PLUS for more information about the available configurations. 3DS16-325SC-20 PQFP64 3DS16-325SI-20 PQFP64 3DS16-325SC-15 PQFP64 3DS16-325SI-15 PQFP64
3D
S
16
-
32
5
(S)
(C / I)
-
15
ACCESS TIME -15 ns -20 ns C : Commercial temperature range ( 0C to +70C) I : Industrial temperature range (- 40C to +85C) PACKAGE S : PQFP64 5.0V SUPPLY 32 bits WORD 16 Mbits SRAM 3D PLUS
PRODUCT MARKING - Trademark - Part Number - Date Code (ww,yy) - Serial Number on request
3DS16-325S 5199
MAIN SALES OFFICE France 3D PLUS Tel : 33 (0)1 30 83 26 50 Fax : 33 (0)1 39 56 25 89 e-mail : sales@3d-plus.com
DISTRIBUTOR
3D PLUS S.A. reserves the right to change or cancel products or specifications without notice. C 3D PLUS, 1999 3D PLUS, 641 rue Helene Boucher - ZI F-78532 BUC Cedex FRANCE Tel : 33 (0)1 30 83 26 50 FAX : 33 (0)1 39 56 25 89 Web : http://www. 3d-plus.com 3DFP-0012 Rev : 2 January 2000 Page 3/3

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